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| SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 - NOVEMBER 1995 FEATURES * Low equivalent on-resistance; RCE(sat) 250m at 1A COMPLEMENTARY TYPE PARTMARKING DETAIL FMMT549 449 FMMT449 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb = 25C Operating and Storage Temperature Range PARAMETER SYMBOL SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg UNIT VALUE 50 30 5 2 1 200 500 -55 to +150 CONDITIONS. UNIT V V V A A mA mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). MIN. MAX. Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage V(BR)CBO V(BR)CEO 50 30 5 0.1 10 0.1 0.5 1.0 1.25 1.0 70 100 80 40 150 15 300 MHz pF V V V A A A IC=1mA, IE=0 IC=10mA, IB=0* IE=100A, IC=0 VCB=40V, IE=0 VCB=40V, Tamb=100C VEB=4V, IC=0 IC=1A, IB=100mA* IC=2A, IB=200mA* IC=1A, IB=100mA* IC=1A, VCE=2V* IC=50mA, VCE=2V* IC=500mA, VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* IC=50mA, VCE=10V f=100mHz VCB=10V, f=1MHz Emitter-Base Breakdown V(BR)EBO Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE V V V V fT Cobo *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for this device 3 - 106 FMMT449 TYPICAL CHARACTERISTICS tf,tr,td IB1=IB2=IC/10 VCE=10V 0.8 ns 150 - (Volts) 0.6 IC/IB=10 tf Switching time ts 100 tr ns 800 0.4 td 50 ts tr ts 0 0.01 0.1 td 1 tf 600 V 0.2 400 200 0 0.001 0.01 0 0.1 1 10 I+ - Collector Current (Amps) I+ - Collector Current (Amps) VCE(sat) v IC Switching Speeds 200 1.8 1.6 160 VCE=2V 1.4 1.2 IC/IB=10 120 - (Volts) V 1.0 0.8 0.6 h 80 40 0.4 0.2 0 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 I+ - Collector Current (Amps) I+ - Collector Current (Amps) hFE v IC VBE(sat) v IC 1.8 10 1.4 I+ -Collector Current (A) 1.6 - (Volts) 1.2 1.0 0.8 0.6 VCE=2V 1 DC 1s 100ms 10ms 1ms 100s 0.1 V 0.4 0.2 0.001 0.01 0.1 1 10 0.01 0.1 1 10 100 I+ - Collector Current (Amps) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area 3 - 107 |
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